N-Channel Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low ON-Resistance • Low voltage drive makes this device ideal for portable equipment • Fast Switching Speed • Easily designed drive circuits • Easy to parallel • Available in Lead

文件：578.56 Kbytes 页数：4 Pages

MCC

丝印：TL；Package：EMT3；Small switching (30V, 0.1A)

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：87.75 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：KN；Package：EMT3；2.5V Drive Nch MOS FET

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：78.75 Kbytes 页数：4 Pages

ROHM

罗姆

N-channel MOSFET

SOT-523 Plastic-Encapsulate MOSFETS FEATURE ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel APPLICATION ● Interfacing, Switching

文件：1.14493 Mbytes 页数：5 Pages

JIANGSU

长电科技

N-Channel MOSFET

■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel.

文件：1.00236 Mbytes 页数：3 Pages

KEXIN

科信电子

N -channel MOSFET

N-Channel Field Effect Transistor Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Applications ● Interfacing, switching

文件：1.27705 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Channel 30-V(D-S) MOSFET

Features 1) Lowon-resistance. 2) Fast switching speed. 3)Lowvolage drive (2.5V) makes this device idealfor portable equipment. | 4) Drive circuits can be simp. | 5 Parallel use is easy. | 6)ESD protected 2KV HEM Applications Interfacing, switching (30V. 100mA) |

文件：1.69108 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

文件：2.72725 Mbytes 页数：4 Pages

TUOFENG

拓锋半导体

2.5V Drive Nch MOS FET

文件：89.69 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：TL；Package：EMT3；2.5V Drive Nch MOS FET

文件：76.1 Kbytes 页数：4 Pages

ROHM

罗姆