丝印：KN；Package：SOT-523；N-channel MOSFET

文件：671.03 Kbytes 页数：3 Pages

YFWDIODE

佑风微

场效应晶体管

CBI

创基电子

N-Channel MOSFET

JSCJ

长晶科技

MOSFET

GoalTop

高特

丝印：KNA；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Easy to parallel

文件：2.66884 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：KN；Package：EMT3F；2.5V Drive Nch MOSFET

Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy.

文件：959.93 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：KN；Package：SOT-523；Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

文件：361.32 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：KN；Package：EMT3；2.5V Drive Nch MOS FET

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：78.75 Kbytes 页数：4 Pages

ROHM

罗姆

2.5V Drive Nch MOS FET

文件：89.69 Kbytes 页数：4 Pages

ROHM

罗姆

2.5V Drive Nch MOS FET

文件：76.1 Kbytes 页数：4 Pages

ROHM

罗姆