Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)

文件：43.35 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)

文件：81.6 Kbytes 页数：7 Pages

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Transistors>Switching/MOSFETs

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)

文件：81.6 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)

文件：81.6 Kbytes 页数：7 Pages

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Silicon N-Channel MOS FET High Speed Power Switching

•  Low on-resistance\n   RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA)\n\n•  2.5V gate drive devices.\n\n•  Small package (MPAK)

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