| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SK2926 | Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 |  | |
2SK2926 | Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SK2926 | N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
N-Channel Silicon MOSFET N-ChannelSiliconMOSFET Features Lowon-resistance RDS=0.042Ωtyp. Highspeedswitching | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | ||
Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
N-Channel MOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |
详细参数
- 型号：
2SK2926
- 制造商：
Renesas Electronics Corporation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
TO252 |
7906200 |
询价 | ||||
HITACHI/日立 |
24+ |
TO 262 263 |
158297 |
明嘉莱只做原装正品现货 |
询价 | ||
HITACHI |
13+ |
SOT-252 |
7500 |
特价热销现货库存 |
询价 | ||
RENESAS瑞萨/HITACHI日立 |
2008++ |
TO-252 |
8880 |
新进库存/原装 |
询价 | ||
HITACHI |
23+ |
TO-252 |
9500 |
专业优势供应 |
询价 | ||
RENESAS |
2339+ |
TO-252 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
RENESAS |
23+ |
PLCC44L |
5000 |
原装正品,假一罚十 |
询价 | ||
RENESAS |
2022+ |
TO-252 |
5000 |
全现原装公司现货 |
询价 | ||
23+ |
N/A |
38460 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 |
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