N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK2552 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S

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Small signal transistor for ECM impedance conversion

NEC

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JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552B is suitable for converter of ECM. General-purpose product. FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone

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N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK2552B is suitable for converter of ECM. General-purpose product. FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Small package: SC-75 (USM)

文件：124.05 Kbytes 页数：5 Pages

NEC

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JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the 2SK2552C is especially suitable for compact ECMs for audio or mobile devices such as cel

文件：133.62 Kbytes 页数：5 Pages

NEC

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JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the

文件：308.73 Kbytes 页数：7 Pages

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JUNCTION FIELD EFFECT TRANSISTOR

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