SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-Resistance RDS (on)1 = 20 mW (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mW (VGS = 4 V, ID = 20 A) •

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK2510 is N-Channel MOS Field Effect Transistor designed\nfor high current switching applications.\nFEATURES\n• Super Low On-Resistance\nRDS (on)1= 20 mΩ(VGS= 10 V, ID= 20 A)\nRDS (on)2= 30 mΩ(VGS= 4 V, ID= 20 A)\n• Low Ciss Ciss= 1 600 pF TYP.\n• Built-in G-S Protection Diode • Super Low On-Resistance\nRDS (on)1= 20 mΩ(VGS= 10 V, ID= 20 A)\nRDS (on)2= 30 mΩ(VGS= 4 V, ID= 20 A)\n• Low Ciss Ciss= 1 600 pF TYP.\n• Built-in G-S Protection Diode;

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