Silicon N Channel MOS FET

Features • Low on-resistance. • RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) • 2.5 V gate drive device. • Small package (MPAK). Application High speed power switching

文件：103.67 Kbytes 页数：7 Pages

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瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance. • RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) • 2.5 V gate drive device. • Small package (MPAK). Application High speed power switching

文件：103.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance. • RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) • 2.5 V gate drive device. • Small package (MPAK). Application High speed power switching

文件：103.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance. • RDS(on) = 2.6 max. (at V GS = 4 V, ID = 100mA) • 2.5V gate drive device. • Small package (MPAK). Application Low frequency power switching

文件：40.94 Kbytes 页数：8 Pages

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