N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifie

文件：414.69 Kbytes 页数：2 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.51 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：323.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET 500V 0,9Ω 10A 50W

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS = ± 30V Guarantee\n- Repetitive Avalanche Rated\n\nApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifie

文件：414.69 Kbytes 页数：2 Pages

FUJI

富士通