N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS)

Switching Regulator Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.) ● High forward transfer admittance : |Yfs| = 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：286.12 Kbytes 页数：5 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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isc N-Channel MOSFET Transistor

文件：296.44 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Switching Regulator Applications

文件：705.18 Kbytes 页数：6 Pages

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东芝

Switching Regulator Applications

文件：430.62 Kbytes 页数：6 Pages

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Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID 8 A \nPower Dissipation PD 80 W \nDrain-Source voltage VDSS 500 V ;

Toshiba

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件：705.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件：430.62 Kbytes 页数：6 Pages

TOSHIBA

东芝