Silicon N Channel MOS FET

Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.14 Kbytes 页数：8 Pages

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瑞萨

Silicon N Channel MOS FET

•  Low on-resistance\n•  RDS(on)= 7 mΩtyp.\n•  High speed switching\n•  4 V gate drive device can be driven from 5 V source;

Renesas

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：51.33 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：89.14 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel 60 V (D-S) MOSFET

文件：986.9 Kbytes 页数：7 Pages

VBSEMI

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