2SK2503技术资料参数批发采购科信电子KEXIN-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2SK2503	文件：43.14 Kbytes Page：1 Pages	Silicon N-Channel MOSFET Features ●Lowon-resistance. ●Fastswitchingspeed. ●WideSOA(safeoperatingarea). ●Easilydesigneddrivecircuits. ●Easytoparallel.	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SK2503	文件：135.78 Kbytes Page：4 Pages	Small switching (60V, 5A) Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
2SK2504	文件：43.25 Kbytes Page：1 Pages	Silicon N-Channel MOSFET Features ●Lowon-resistance. ●Fastswitchingspeed. ●WideSOA(safeoperatingarea). ●Easilydesigneddrivecircuits. ●Easytoparallel.	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SK2504	文件：95.66 Kbytes Page：6 Pages	4V Drive Nch MOS FET Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
2SK2504	文件：134.2 Kbytes Page：4 Pages	Small switching (100V, 5A) Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
2SK2504TL	文件：95.66 Kbytes Page：6 Pages	4V Drive Nch MOS FET Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
2SK2507	文件：425.45 Kbytes Page：6 Pages	Chopper Regulator, DC?묭C Converter and Motor Drive Applications ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=0.034Ω(typ.) ●Highforwardtransferadmittance:\|Yfs\|=16S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK2507	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK2507	文件：292.55 Kbytes Page：5 Pages	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=0.034Ω(typ.) ●Highforwardtransferadmittance:\|Yfs\|=16S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK2507F	文件：425.45 Kbytes Page：6 Pages	Chopper Regulator, DC?묭C Converter and Motor Drive Applications ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=0.034Ω(typ.) ●Highforwardtransferadmittance:\|Yfs\|=16S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK2508	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK2510	文件：81.98 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK2510	文件：224.99 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2510isN-ChannelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •SuperLowOn-Resistance RDS(on)1=20mW(VGS=10V,ID=20A) RDS(on)2=30mW(VGS=4V,ID=20A) •	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2511	文件：116.23 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK2511	文件：315.99 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2511isN-ChannelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •SuperLowon-stateresistance RDS(on)1=27mΩMAX.(VGS=10V,ID=20A) RDS(on)2=40mΩMAX.(VGS=4V,ID=20A) •	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2512	文件：82.26 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK2512	文件：225.25 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2512isN-ChannelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •LowOn-Resistance RDS(on)1=15mW(VGS=10V,ID=23A) RDS(on)2=23mW(VGS=4V,ID=23A) •LowCi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2514	文件：114.63 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK2514	文件：272.33 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2514isN-ChannelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •SuperLowon-stateresistance RDS(on)1≤15mΩMAX.(VGS=10V,ID=25A) RDS(on)2≤23mΩMAX.(VGS=4V,ID=25A) •	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK2515	文件：120.86 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC

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详细参数

型号：
2SK25
制造商：
KEXIN
制造商全称：
Guangdong Kexin Industrial Co.,Ltd
功能描述：
Silicon N-Channel MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	2SK2503	ROHM/罗姆	22+	TO-252	30240	只做原装进口免费送样!!	询价
深圳市汇莱威科技有限公司	2SK2503	ROHM/罗姆		TO252	7906200		询价
深圳市莱克讯科技有限公司	2SK2503	ROHM原厂	2017+	TO-252	44558	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市力通伟业半导体有限公司	2SK2503	ROHM	13+	SOT-252	7500	特价热销现货库存	询价
深圳好佳好科技有限公司	2SK2503	ROHM	360000	原厂原装	1305		询价
深圳市特顺芯科技有限公司	2SK2503	ROHM	2008++	TO-252	8700	新进库存/原装	询价
深圳市弘为电子有限公司	2SK2503	ROHM	16+	TO252	2230	原装现货假一罚十	询价
深圳市益百分电子有限公司	2SK2503	ROHM	01+	SOT252	2900	全新原装进口自己库存优势	询价
深圳市昌和盛利电子有限公司	2SK2503	ROHM	23+	D-PAK	12335		询价
深圳市博浩通科技有限公司	2SK2503	罗姆	23+	TO-252	6000	专业优势供应	询价

更多2SK25供应商更新时间2024-4-29 16:37:00

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