SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2488 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance RDS (on) = 1.2 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Low input capacitance Ciss = 2 900 pF TYP. • High A

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

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ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2488 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES\n• Low On-Resistance\n   RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A)\n• Low Ciss Ciss = 2 900 pF TYP.\n• High Avalanche Capability • Low On-Resistance\n   RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A)\n• Low Ciss Ciss = 2 900 pF TYP.\n• High Avalanche Capability Ratings;

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