SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A) RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 0.14 W MAX. (@ VGS = 10 V, ID = 8.0 A) RDS(on)2 = 0.17 W MAX. (@ VGS = 4 V, ID =

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

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VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：323.75 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR , 100V, 20A/15A

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications.FEATURES\n• Low On-Resistance\n   RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A)\n   RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)\n• Low • Low On-Resistance\n   RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A)\n   RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)\n• Low CissCiss= 790 pF TYP.\n• Built-in G-S Gate Protection Diodes\n• High Avalanche Capability Ratings;

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