N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

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FUJI

富士通

N-channel MOS-FET(300V 1Ohm 5A 30W)

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS= ± 30V Guarantee\n- Avalanche ProofApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

TO-92

TOSHIBA/东芝

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TO92

TOSHIBA/东芝

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SOT89

TOSHIBA

东芝

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