Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：96.04 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：96.04 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.71 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：34.27 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：96.04 Kbytes 页数：8 Pages

RENESAS

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：K1529；Package：SC-65；N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application ● High breakdown voltage : VDSS = 180 V ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Complementary to 2SJ200

文件：181.93 Kbytes 页数：3 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

High-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201

文件：183.24 Kbytes 页数：3 Pages

TOSHIBA

东芝

High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201

文件：372.13 Kbytes 页数：4 Pages

TOSHIBA

东芝

High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201

文件：372.12 Kbytes 页数：4 Pages

TOSHIBA

东芝