Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.46 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：281.9 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.75 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.46 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 45A@ TC=25℃ · Drain Source Voltage -VDSS= 65V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.02Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372 Kbytes 页数：2 Pages

ISC

无锡固电

N Channel MOS Type (pie -MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 500 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：570.54 Kbytes 页数：6 Pages

TOSHIBA

东芝

DC?묭C Converter and Motor Drive Applications

DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 500 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：381.1 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

DC?묭C Converter and Motor Drive Applications

DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 500 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：381.1 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.36 Kbytes 页数：2 Pages

ISC

无锡固电