Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Suitable for low voltage operation Application High speed power switching

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and headphone stereos which need power savin

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NEC

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丝印：G13；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and hea

文件：327.47 Kbytes 页数：7 Pages

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丝印：G14；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1581, N-channel vertical type MOS FET, can be driven by 2.5 V power supply. As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stere

文件：607.46 Kbytes 页数：7 Pages

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：239.15 Kbytes 页数：8 Pages

NEC

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MOS Field Effect Transistor

Features ● Can be driven by Ics having a 3V single power supply. ● Not necessry to consider driving current because of its thgh input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

文件：43.42 Kbytes 页数：1 Pages

KEXIN

科信电子

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

文件：140.97 Kbytes 页数：7 Pages

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N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

文件：140.97 Kbytes 页数：7 Pages

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N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

文件：140.97 Kbytes 页数：7 Pages

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丝印：G15；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1582, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is suitable for use as a high-speed switching de

文件：725.13 Kbytes 页数：7 Pages

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