N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low on-state resistance RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.6 MAX.@VGS=10V,ID=0.5A

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING

文件：510.64 Kbytes 页数：8 Pages

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low on-state resistance RDS(on)=0.8 Ω MAX.@VGS=2.5V,ID=0.5A RDS(on)=0.5 Ω MAX.@VGS=4.0V,ID=1.0A

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：284.41 Kbytes 页数：6 Pages

NEC

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丝印：NG；Package：SC-62；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and head

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：311.69 Kbytes 页数：6 Pages

NEC

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low on-state resistance RDS(on)=0.5 Ω MAX.@VGS=2.5V,ID=1.0A RDS(on)=0.3 Ω MAX.@VGS=4.0V,ID=1.5A

文件：44.88 Kbytes 页数：1 Pages

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