N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● Avalanche - proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：70.81 Kbytes 页数：2 Pages

FUJI

富士通

SILICON N-CHANNEL JUNCTION-TYPE FIELD EFFECT TRANSISTOR FOR CONDENSER MICROPHONE IMPEDANCE CONVERSION

SILICON N-CHANNEL JUNCTION-TYPE FIELD EFFECT TRANSISTOR FOR CONDENSER MICROPHONE IMPEDANCE CONVERSION

文件：45.64 Kbytes 页数：1 Pages

SANYO

三洋

Drain Current ?밒D=12A@ TC=25C

DESCRIPTION • Drain Current –ID=12A@ TC=25℃ • Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：64.84 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Current ?밒D=12A@ TC=25C

DESCRIPTION • Drain Current –ID=12A@ TC=25℃ • Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：64.84 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Current ?밒D=3A@ TC=25C

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=800 (Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：64.83 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Current ?밒D=3A@ TC=25C

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：64.83 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.83 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：34.3 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.83 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.83 Kbytes 页数：7 Pages

RENESAS

瑞萨