Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.93 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power swit

文件：82.6 Kbytes 页数：7 Pages

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瑞萨

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power swit

文件：82.6 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.52 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：82.45 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.51 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：82.45 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：84.28 Kbytes 页数：7 Pages

RENESAS

瑞萨