Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：48.42 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.79 Kbytes 页数：7 Pages

RENESAS

瑞萨

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 4A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching

文件：65.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.08696 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.79 Kbytes 页数：7 Pages

RENESAS

瑞萨