Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：83.61 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：34.25 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：83.29 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：83.29 Kbytes 页数：7 Pages

RENESAS

瑞萨

N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER)

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power : Po ≥ 190 W (Min.) Drain Efficiency : ηD = 65 (Typ.) Frequency : f = 230 MHz Push−Pull Structure Package

文件：135.43 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER • Output Power : Po ≥ 190 W (Min.) • Drain Efficiency : ηD = 65 (Typ.) • Frequency : f = 230 MHz • Push−Pull Structure Package

文件：132.66 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.45 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：95.4 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.45 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：95.4 Kbytes 页数：8 Pages

RENESAS

瑞萨