SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：381.46 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1122 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 20 A) • Low Ciss Ci

文件：2.52045 Mbytes 页数：9 Pages

RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION · DC-DC converter · Battery Chargers · DC Choppers

文件：312.25 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.13 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1123 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4 V, ID = 20 A) • Low Ciss Ciss

文件：2.25004 Mbytes 页数：9 Pages

RENESAS

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：442.81 Kbytes 页数：8 Pages

NEC

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SILICON N CHANNEL JUNCTION TYPE

FOR ANALOG SWITCH,, CHOPPER AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS, FEATURES: . High Breakdown Voltage : V(br)gdS=-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : ID (oFF)=100pA(Max. ) (VdS=20V)

文件：132.92 Kbytes 页数：4 Pages

TOSHIBA

东芝

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

文件：89.88 Kbytes 页数：1 Pages

TOSHIBA

东芝

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：392.1 Kbytes 页数：6 Pages

NEC

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Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 页数：2 Pages

NEC

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