SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1122 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 20 A) • Low Ciss Ci

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION · DC-DC converter · Battery Chargers · DC Choppers

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ISC

无锡固电

Isc N-Channel MOSFETransistor

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ISC

无锡固电

Switching N-channel Power MOS FET Industrial Use

The 2SK1122 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

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