Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：83.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary breakdown\n•  Suitable for switching regulator and DC-DC converterApplication\nHigh speed power switching;

Renesas

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：48.8 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：83.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-Channel 650 V (D-S) MOSFET

文件：1.08711 Mbytes 页数：9 Pages

VBSEMI

微碧半导体