N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V)

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TOSHIBA

东芝

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

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TOSHIBA

东芝

TRANSISTOR

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ETCList of Unclassifed Manufacturers

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Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

Toshiba

东芝

JFET

Dorsent

道崇

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：49.25 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：83.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：83.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-CHANNEL SILICON POWER MOS-FET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

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Drain Current ?밒D=3.5A@ TC=25C

DESCRIPTION • Drain Current –ID=3.5A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS • Designed for high voltage, high speed power switching

文件：68.32 Kbytes 页数：2 Pages

ISC

无锡固电