N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S

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NEC

瑞萨

N-Channel Junction Field Effect Transistors

■ Features ● VDS (V) = 20V ● ID = 10m A ● High forward transfer admittance 1000 μs TYP. (IDSS = 100 μA) 1600 μs TYP. (IDSS = 200 μA) ● Includes diode and high resistance at G - S

文件：1.0091 Mbytes 页数：3 Pages

KEXIN

科信电子

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：635.43 Kbytes 页数：5 Pages

Bychip

百域芯

2SK1113

2SK1113

文件：62.9 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Field Effect Transistor (MOS II.I)

high-speed, high-current switching ○ For switching regulators . Low on-resistance. : RDS (ON)=0.95Ω (typical) High forward transmission admittance. | Y's|=4.0S (Standard) Ipss=300A (max) (VDs=600V) Low leakage current. Easy to handle, enhancement type. : Vth=1.5~3.5V(Vps=10V, Ip=1mA)

文件：65.09 Kbytes 页数：2 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) ● High forward transfer admittance : |Yfs| = 2.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：255.13 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

文件：89.88 Kbytes 页数：1 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：255.97 Kbytes 页数：5 Pages

TOSHIBA

东芝

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：258.47 Kbytes 页数：5 Pages

TOSHIBA

东芝