2SK112

CHOPPER SWITCHING APPLICATIONS

Application GeneralPurpose LowNoise LowNoise HighIYfslLowNoise ControlledResistor Swiching,Chopper AnalogSwitch,Chopper Application Switchingchoppen

2SK1120

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=1.5Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=4.0S(typ.) ●Lowleakagecurrent:IDSS=300μA(max)(VDS=800V) ●Enhancementmode:Vth=1.5to3.5V(VDS=10V,ID=1mA)

2SK1120F

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS

DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=1.5Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=4.0S(typ.) ●Lowleakagecurrent:IDSS=300μA(max)(VDS=800V) ●Enhancementmode:Vth=1.5to3.5V(VDS=10V,ID=1mA)

2SK1122

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

2SK1122

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1122isN-ChannelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance RDS(on)1=50mΩMAX.(VGS=10V,ID=20A) RDS(on)2=70mΩMAX.(VGS=4.0V,ID=20A) •LowCissCi

2SK1122

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·DC-DCconverter ·BatteryChargers ·DCChoppers

2SK1123

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

2SK1123

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1123isN-ChannelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance RDS(on)1=27mΩMAX.(VGS=10V,ID=20A) RDS(on)2=50mΩMAX.(VGS=4V,ID=20A) •LowCissCiss

2SK1123

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

2SK1120

isc N-Channel MOSFET Transistor