CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

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TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION · DC-DC converter · Battery Chargers · DC Choppers

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1122 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 20 A) • Low Ciss Ci

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RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1123 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4 V, ID = 20 A) • Low Ciss Ciss

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RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：442.81 Kbytes 页数：8 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：303.51 Kbytes 页数：2 Pages

ISC

无锡固电