N-CHANNEL SILICON POWER MOS-FET

Features 1. High Speed switching 2. Low on-resistance 3. No secondary breakdown 4. Low driving power 5. High voltage

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Fuji

富士通

N-CHANNEL SILICON POWER MOS-FET

[FUJI] N-CHANNEL SILICON POWER MOS-FET

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ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL SILICON POWER MOS-FET

[FUJI]

文件：169.22 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOS-FET

[FUJI]

文件：169.22 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For switching Complementary to 2SJ163 ■ Features ● Low ON-resistance ● Low-noise characteristics

文件：31.78 Kbytes 页数：2 Pages

Panasonic

松下

Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For switching Complementary to 2SJ164 ■ Features ● Low ON-resistance ● Low-noise characteristics

文件：31.25 Kbytes 页数：2 Pages

Panasonic

松下

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) • Includes diode and high

文件：218.1 Kbytes 页数：10 Pages

RENESAS

瑞萨

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) • Includes diode and high

文件：178.82 Kbytes 页数：10 Pages

RENESAS

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Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 页数：2 Pages

NEC

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