Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V)

Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON)= 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −200 V) • Enhancement mode: Vth= −1.5 to −3

文件：219.82 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

Relay Drive, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8

文件：253.7 Kbytes 页数：6 Pages

TOSHIBA

东芝

P-Channel 4 0 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

文件：976.18 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Relay Drive, DC?묭C Converter and Motor Drive Applications

Relay Drive, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8

文件：187.42 Kbytes 页数：6 Pages

TOSHIBA

东芝

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Load S/W Applicaions. • Avalanche resistance guarantee.

文件：62.08 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Load S/W Applicaions. • Avalanche resistance guarantee.

文件：62.63 Kbytes 页数：4 Pages

SANYO

三洋

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

文件：167.41 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

文件：276.82 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

文件：276.82 Kbytes 页数：10 Pages

RENESAS

瑞萨