Drain Current ?밒D=6A@ TC=25C

DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching

文件：66.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOS-FET

* High speed switching* Low on-resistance* No secondary breakdown* Low driving power* High voltage

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

* High speed switching * Low on-resistance * No secondary breakdown * Low driving power * High voltage

文件：168.12 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

FUJI

富士通