Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

文件：89.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

文件：89.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

文件：89.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices.

文件：50.81 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Hight Speed Power Switching

Features Low on-resistance RDS(on)= 0.065 typ. (at VGS= -10V, ID=-5A) Low drive current High speed switching 4V gate drive devices.

文件：52.09 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

文件：89.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATOINS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON)= 0.5 Ω(typ.) High forward transfer admittance : |Yfs| = 1.0 S (typ.) Low leakage current : IDSS= −100 µA (max) (VDS= −60 V) Enhancement−mode : Vth= −0.8~

文件：138.82 Kbytes 页数：2 Pages

TOSHIBA

东芝

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON)= 1.35 Ω(typ.) High forward transfer admittance : |Yfs| = 0.7 S (typ.) Low leakage current : IDSS= −100 µA (VDS= −100 V) Enhancement−mode : Vth= −0.8~−2.0

文件：135.25 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝