2SJ350-E中文资料下载批发采购瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ350-E	文件：82.87 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter 文件：82.87 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ350	文件：1.61947 Mbytes Page：7 Pages	P-Channel 100 V (D-S) MOSFET 文件：1.61947 Mbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ350	文件：82.87 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter 文件：82.87 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ350	文件：47.15 Kbytes Page：9 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching Features • Low on-resistance • High speed switc 文件：47.15 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SJ350-E供应商更新时间2026-1-17 10:59:00