Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：47.8 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

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Transistors>Switching/MOSFETs

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