P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode : Vth = −0.8 to −2.0 V

文件：281.06 Kbytes 页数：5 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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东芝

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：725.81 Kbytes 页数：6 Pages

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Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：L²-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID -5 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS -60 V ;

Toshiba

东芝

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：725.81 Kbytes 页数：6 Pages

TOSHIBA

东芝

DC−DC Converter, Relay Drive and Motor Drive

文件：416.04 Kbytes 页数：6 Pages

TOSHIBA

东芝

Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage