Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter and motor driver

文件：1.10848 Mbytes 页数：5 Pages

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瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter and motor driver Application High speed power switching

文件：29.94 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter and motor driver

文件：1.10848 Mbytes 页数：5 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.85 Kbytes 页数：2 Pages

ISC

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