2SJ387L-E规格书批发供应瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ387L-E	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387S	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387S	文件：48.47 Kbytes Page：2 Pages	Silicon P-Channel MOSFET Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter 文件：48.47 Kbytes 页数：2 Pages	KEXIN 科信电子	KEXIN
2SJ387S	文件：47.8 Kbytes Page：10 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：47.8 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SJ387L-E供应商更新时间2025-12-7 8:14:00