2SJ387STL-E资料datasheet下载贸易商瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ387STL-E	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387	文件：47.8 Kbytes Page：10 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：47.8 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ387L	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

更多2SJ387STL-E供应商更新时间2026-1-19 14:03:00