2SJ387资料使用说明书批发供应日立Hitachi-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ387	文件：47.8 Kbytes Page：10 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：47.8 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ387	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387	文件：300 bytes Page：1 Pages	Silicon P-Channel MOS FET • Low on-resistance\n• Low drive current\n• 2.5 V Gate drive device can be driven from 3 V Source\n• Suitable for Switching regulator, DC - DC converterApplication\nHigh speed power switching;	HITACHI 日立	HITACHI
2SJ387	文件：300 bytes Page：1 Pages	Silicon P-Channel MOS FET Description\nHigh speed power switching • Low on-resistance\n• Low drive current\n• 2.5 V Gate drive device can be driven from 3 V Source\n• Suitable for Switching regulator, DC-DC converter;	Renesas 瑞萨	Renesas
2SJ387L	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387L	文件：47.8 Kbytes Page：10 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：47.8 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ387L-E	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387S	文件：47.8 Kbytes Page：10 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：47.8 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ387S	文件：88.41 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter 文件：88.41 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ387S	文件：48.47 Kbytes Page：2 Pages	Silicon P-Channel MOSFET Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter 文件：48.47 Kbytes 页数：2 Pages	KEXIN 科信电子	KEXIN

详细参数

型号：
2SJ387
制造商：
HITACHI
制造商全称：
Hitachi Semiconductor
功能描述：
Silicon P-Channel MOS FET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SJ387	HIT	24+	TO-251	20000		询价
深圳市鹏和科技有限公司	2SJ387	RENESAS	24+	TO-252	5000	只做原装公司现货	询价
深圳市赛芯源科技有限公司	2SJ387	RENESAS	18+	TO-252	41200	原装正品,现货特价	询价
艾睿（深圳）半导体有限公司	2SJ387	RENESAS/瑞萨	2447	TO-252	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	2SJ387	RENESAS/瑞萨	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	2SJ387	H	22+	TO-252	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	2SJ387	RENESAS/瑞萨	23+	TO-252	15000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市金芯世纪电子有限公司	2SJ387	RENESAS/瑞萨	22+	TO-252	100000	代理渠道/只做原装/可含税	询价
深圳庞田科技有限公司	2SJ387	HITACHI	2023+环保现货	TO-252	18000	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市旺财半导体有限公司	2SJ387	HITACHI	23+		2800	正品原装货价格低	询价

更多2SJ387供应商更新时间2025-12-11 16:30:00

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