Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：47.8 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

• Low on-resistance\n• Low drive current\n• 2.5 V Gate drive device can be driven from 3 V Source\n• Suitable for Switching regulator, DC - DC converterApplication\nHigh speed power switching;

HITACHI

日立

Silicon P-Channel MOS FET

Description\nHigh speed power switching • Low on-resistance\n• Low drive current\n• 2.5 V Gate drive device can be driven from 3 V Source\n• Suitable for Switching regulator, DC-DC converter;

Renesas

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：47.8 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：47.8 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件：88.41 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P-Channel MOSFET

Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter

文件：48.47 Kbytes 页数：2 Pages

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