Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching Features • Low on-resistance • High speed switc

文件：47.15 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

文件：82.87 Kbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel 100 V (D-S) MOSFET

文件：1.61947 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Silicon P-Channel MOS FET

Description\nHigh speed power switching • Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device can be driven from 5 V source\n• Suitable for switching regulator, DC-DC converter;

Renesas

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

文件：82.87 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：PD；Package：SOT-523；P-Channel MOSFET

文件：523.87 Kbytes 页数：4 Pages

KEXIN

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