2SJ386资料使用说明书行情报价瑞萨HITACHI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ386	文件：38.07 Kbytes Page：7 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：38.07 Kbytes 页数：7 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ386	文件：71.69 Kbytes Page：6 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter 文件：71.69 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
2SJ386	文件：300 bytes Page：1 Pages	Pch Single Power Mosfet -30V -3A 0.4Mohm To92Mod The 2SJ386 is a Pch Single Power Mosfet -30V -3A 0.4Mohm To92Mod.	Renesas 瑞萨	Renesas
2SJ386	文件：300 bytes Page：1 Pages	Silicon P-Channel MOS FET	HITACHI 日立	HITACHI
2SJ386TZ-E	文件：71.69 Kbytes Page：6 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter 文件：71.69 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS

更多2SJ386供应商更新时间2026-4-24 10:20:00