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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ352	文件：40.26 Kbytes Page：8 Pages	Silicon P-Channel MOS FET Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair 文件：40.26 Kbytes 页数：8 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ352	文件：70.87 Kbytes Page：6 Pages	Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with 文件：70.87 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
2SJ352	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas
2SJ352-E	文件：70.87 Kbytes Page：6 Pages	Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with 文件：70.87 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS

更多2SJ352供应商更新时间2025-10-6 16:30:00