Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：29.71 Kbytes 页数：4 Pages

SANYO

三洋

丝印：EW；Package：SOT-323；General purpose amplification (12V, 1.5A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 200mV At IC = 500mA / IB = 25mA Application Low frequency amplifier

文件：75.11 Kbytes 页数：3 Pages

ROHM

罗姆

Low frequency amplifier

Features 1) Collector current is large. 2) VCE(sat)≦ 180mV at IC= 1A / IB= 50mA 3) Complementary PNP Types : 2SB1690 Application LOW FREQUENCY AMPLIFIER

文件：89.45 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：FW；Package：SOT-346；Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 180mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

文件：73.65 Kbytes 页数：3 Pages

ROHM

罗姆

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

文件：634.89 Kbytes 页数：11 Pages

ROHM

罗姆

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

文件：87.49 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：BJ；Package：SOT-416；General purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max.VCE(sat)=300mV at IC/IB=50/5mA) Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.78245 Mbytes 页数：9 Pages

ROHM

罗姆

General purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max.VCE(sat)=300mV at IC/IB=50/5mA) Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.78245 Mbytes 页数：9 Pages

ROHM

罗姆

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

文件：69.4 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

文件：69.4 Kbytes 页数：6 Pages

RENESAS

瑞萨