Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ;high speed • Low saturation voltage • Built-in damper diode APPLICATIONS • Horizontal deflection output for color TV

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ISC

无锡固电

Silicon NPN Epitaxial Planar Type

■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Complementary to 2SB1599

文件：50.41 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazin

文件：37.67 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP epitaxial planer type(For power amplification)

Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：39.47 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type

Features ● High collector to emitter voltage VCEO. ● Low collector to emitter saturation voltage VCE(sat).

文件：51.42 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification ■ Features ● High collector to emitter voltage VCEO. ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the t

文件：37.08 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type(For low-frequency output amplification)

■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● Allowing supply with the radial taping

文件：34.27 Kbytes 页数：2 Pages

PANASONIC

松下

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA)

文件：191.38 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) • Complementary to 2SB1602

文件：191.53 Kbytes 页数：3 Pages

TOSHIBA

东芝

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with onchip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mot

文件：234.63 Kbytes 页数：6 Pages

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