NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector s

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NEC

瑞萨

Old Company Name in Catalogs and Other Documents

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector s

文件：236.48 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SD2403 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572

文件：137.59 Kbytes 页数：6 Pages

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

The 2SD2403 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572

文件：261.43 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN Silicon Epitaxia

■ Features ● High current capacitance ● Low collector saturation voltage ● Complementary to 2SB1572

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KEXIN

科信电子

Plastic-Encapsulate Transistor

Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-223 case with the type designation PZT2403

文件：297.52 Kbytes 页数：2 Pages

SECOS

喜可士

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector Power Dissipation- : PC= 25W@ TC= 25℃ • Good Linearity of hFE APPLICATIONS • Designed for power amplifier applications.

文件：247.59 Kbytes 页数：2 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity

文件：137.99 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity

文件：130.33 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion planer type(For low-frequency output amplification)

■ Features ● High collector to base voltage VCBO. ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape

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PANASONIC

松下