NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA)

文件：191.38 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power Amplifier Applications

文件：135.06 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for low frequency applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 2 A \nCollector-emitter voltage VCEO 60 V ;

Toshiba

东芝

Power Amplifier Applications

文件：135.06 Kbytes 页数：5 Pages

TOSHIBA

东芝