isc Silicon NPN Power Transistor

文件：263.61 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Wide Area of Safe Operation • Complement to Type 2SB1421 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier

文件：248.42 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Triple Diffused Planar Transistor(Ignitor, Driver for Solenoid and Motor, and General Purpose)

Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose

文件：23.94 Kbytes 页数：1 Pages

Sanken

三垦

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1500(Min)@ IC= 3A • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A • Incorporating a built-in zener diode • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for us

文件：255.02 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：R1M；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Darlington Connection for a High hFE High Input Impedance

文件：2.93787 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISOR (NPN)

FEATURES ● Darlington Connection for a High hFE ● High Input Impedance

文件：430.45 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

Silicon Epitaxial Planar Transistor

FEATURES ● Darlington connection for a high Hfe ● High input impedance APPLICATIONS ● General purpose amplifiers.

文件：159.7 Kbytes 页数：4 Pages

BILIN

银河微电

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Darlington Connection for a High hFE ● High Input Impedance

文件：271.4 Kbytes 页数：1 Pages

JIANGSU

长电科技

NPN Plastic Plastic-Encapsulate Transistor

FEATURE • Darlington connection for a high hFE. • High input impedance.

文件：218.02 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：5K*；Package：SMT3；High-gain Amplifier Transistor (30V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier

文件：70.69 Kbytes 页数：3 Pages

ROHM

罗姆