丝印：5K；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：5K；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：5K；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：5K；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：5K；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：299.21 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5K；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN complement: NHDTA123JU 2.2 47 NHDTC123JU NHDTA143ZU 4.7 47 NHDTC143

文件：299.23 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5K；Package：SOT23；30 V, N-channel Trench MOSFET

description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology Applications • Relay driver

文件：267.97 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：5K；Package：SC-62；30 V, 5.1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：310.7 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5K；Package：SOT1220；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Side w

文件：313.6 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：5K；Package：WDFN-8SL；3A, 1.2MHz, 6V Synchronous Step-Down Converter In WDFN-8L 2x2

General Description The RT5753A/B/C/D is a simple, easy-to-use, 3A synchronous step-down DC-DC converter with an input supply voltage range from 2.5V to 6V. The device builds in an accurate 0.6V reference voltage and integrates low RDS(ON) power MOSFETs to achieve high efficiency in WDFN-8L

文件：972.79 Kbytes 页数：28 Pages

RICHTEK

立锜科技