丝印：5K；Package：SOT1220；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Side w

文件：313.6 Kbytes 页数：14 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

NEXPERIA

安世

30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Trench MOSFET technology\n• Side wettable flanks for optical solder inspection\n• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm\n• Exposed drain pad for excellent thermal conduction;

Nexperia

安世