Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Darlington connection for a high hFE, high input impedance. Applications High-gain amplifier transistor.

文件：933.83 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

High-gain Amplifier Transistor (30V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier

文件：61.5 Kbytes 页数：3 Pages

ROHM

罗姆

High-gain Amplifier Transistor (30V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier

文件：61.5 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：D2143；Package：SOT-428；Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

文件：89.73 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor

文件：96.46 Kbytes 页数：5 Pages

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：112.63 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆